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Group members underlined

Book chapters

Materials science of defects in GaAs-based semiconductor lasers
K. Mukherjee

Reliability of lasers on silicon substrates for silicon photonics
J. Norman, D. Jung, A. Liu, J Selvidge, K. Mukherjee, J.E. Bowers, R.W. Herrick


Peer-reviewed journal articles

In the works

Bright mid-infrared photoluminescence from high dislocation density epitaxial PbSe films on GaAs
J. Meyer, A.J. Muhowski, L.J. Nordin, E.T. Hughes, B.B. Haidet, D. Wasserman, K. Mukherjee (submitted)

Epitaxial integration and defect structure of layered-SnSe films on PbSe/III-V templates
B.B. Haidet, E.T. Hughes, K. Mukherjee (submitted)



38. Kinetically limited misfit dislocations formed during post-growth cooling in III-V lasers on silicon
K. Mukherjee, J. Selvidge, E.T. Hughes, J. Norman, C. Shang, R.W. Herrick, J.E. Bowers, Journal of Physics D: Applied Phyisics 54 (2021) 494001

37. Perspective on advances in quantum dot lasers and integration with Si photonic integrated circuits
C. Shang, Y. Wan, J. Selvidge, E.T. Hughes, R.W. Herrick, K. Mukherjee, J. Duan, F. Grillot, W. Chow, J.E. Bowers, Accepted in ACS Photonics (2021)

36. Pipe-diffusion-enriched dislocations and interfaces in SnSe/PbSe heterostructures
E.T. Hughes, B.B. Haidet, B. Bonef, W. Cai, K. Mukherjee, Physical Review Materials 5, 073402 (2021)

35. Reduced dislocation growth leads to long lifetime InAs quantum dot lasers on silicon at high temperatures
J. Selvidge, E.T. Hughes, J. Norman, C. Shang, MJ Kennedy, M. Dumont, A. Netherton, Z. Zhang, R.W. Herrick, J.E. Bowers, K. Mukherjee, Applied Physics Letters 118 (2021) 192101

34. High-temperature reliable quantum-dot lasers on Si with misfit and threading dislocation filters
C. Shang, E.T. Hughes, Y. Wan, M. Dumont, R. Koscica, J. Selvidge, R.W. Herrick, A.C. Gossard, K. Mukherjee, J.E. Bowers, Optica 8, 749-754 (2021)

33. Interface structure and luminescence properties of epitaxial PbSe films on InAs (111)A
B.B. Haidet, L.J. Nordin, A.J. Muhowski, K.D. Vallejo, E.T. Hughes, J. Meyer, P.J. Simmonds, D. Wasserman, K. Mukherjee, Journal of Vacuum Science and Technology A 39 (2021) 023404

32. Ferroelastic Hysteresis in Thin Films of Methylammonium Lead Iodide
R.M. Kennard, C.J. Dahlman, R.A. DeCrescent, J.A. Schuller, K. Mukherjee, R. Seshadri, M.L. Chabinyc, Chemistry of Materials 33 (2021) 298–309

31. A pathway to thin GaAs virtual substrate on on-axis Si (001) with ultralow threading dislocation density
C. Shang, J. Selvidge, E.T. Hughes, J. Norman, A.A. Taylor, A.C. Gossard, K. Mukherjee, and J.E. Bowers, Physica Status Solidi A 218 (2021) 2000402



30. Controlling Facets and Defects of InP Nanostructures in Confined Epitaxial Lateral Overgrowth
A. Goswami, S. Šuran Brunelli, B. Markman, A. Taylor, H-Y. Tseng, K. Mukherjee, M. Rodwell, J. Klamkin, Jonathan, C. Palmstrøm, Physical Review Materials 4(2020) 123403

29. Engineering quantum-coherent defects: the role of substrate miscut in chemical vapor deposition diamond growth
S.A. Meynell, C.A. McClellan, L.B. Hughes, T.E. Mates, K. Mukherjee, and A.C. Bleszynski Jayich, Applied Physics Letters 117 (2020) 194001 (Editor's pick)

28. Defect Filtering for Thermal Expansion Induced Dislocations in III-V Lasers on Silicon
J. Selvidge, J. Norman, E.T. Hughes, C. Shang, D. Jung, A.A. Taylor, MJ Kennedy, R.W. Herrick, J.E. Bowers, and K. Mukherjee, Applied Physics Letters 117 (2020) 122101 (Editor's pick)

27. Recombination-enhanced dislocation climb in InAs quantum dot lasers on silicon
K. Mukherjee, J. Selvidge, D. Jung, J. Norman, A.A. Taylor, M. Salmon, A.Y. Liu, J.E. Bowers, and R.W. Herrick, Journal of Applied Physics. 128 (2020) 025703

26. Nucleation control and interface structure of rocksalt PbSe on (001) zincblende III-V surfaces 
B.B. Haidet, E.T. Hughes, K. Mukherjee, Physical Review Materials 4 (2020) 033402

25. Growth and Magnetotransport in Thin Film α-Sn on CdTe
O. Vail, P. Taylor, P. Folkes, B. Nichols, B.B. Haidet, K. Mukherjee, G. de Coster, Physica Status Solidi B. 257 (2020) 1800513



24. Defects in Cd3As2 Epilayers Via Molecular Beam Epitaxy and Strategies for Reducing Them
A. Rice, K. Park, E.T. Hughes, K. Mukherjee, K. Alberi, Physical Review Materials 3 (2019) 121201(R). (Rapid Communication)

23. Development of Lattice-Mismatched GaInAsP for Radiation Hardness
R.M. France, P. Espinet-Gonzalez, B.B. Haidet, K. Mukherjee, H.L. Guthrey, H.A. Atwater, and D. Walker, IEEE Journal of Photovoltaics (2019)

22. III/V-on-Si MQW lasers by using a novel photonic integration method of regrowth on a bonding template
Y. Hu, D. Liang, K. Mukherjee, Y. Li, C. Zhang, G. Kurczveil, X. Huang, R.G. Beausoleil, Light Science and Applications 8 (2019) 1–9

21. Non-radiative recombination at dislocations in InAs quantum dots grown on silicon
J. Selvidge, J. Norman, M.E. Salmon, E.T. Hughes, J.E. Bowers, R.W. Herrick, K. Mukherjee, Applied Physics Letters 115 (2019) 131102 (Featured article, Scilight)

20. Phase Stability and Diffusion in Lateral Heterostructures of Methyl Ammonium Lead Halide Perovskites
R.M. Kennard, C.J. Dahlman, H. Nakayama, R.A. DeCrescent, J.A. Schuller, R. Seshadri, K. Mukherjee, M.L. Chabinyc, ACS Applied Materials and Interfaces. (2019)

19. Glide of threading dislocations in (In)AlGaAs on Si induced by carrier recombination: Characteristics, mitigation, and filtering
E.T. Hughes, R.D. Shah, K. Mukherjee, Journal of Applied Physics. 125 (2019) 165702 (Editor's pick)

18. Fast diffusion and segregation along threading dislocations in semiconductor heterostructures
B. Bonef, R.D. Shah, K. Mukherjee, Nano Letters 19 (2019) 1428–1436

17. Anomalous tilting in InGaAs graded buffers from dislocation sources at wafer edges
K. Mukherjee, M. Vaisman, P.G. Callahan, M.L. Lee, Journal of Crystal Growth. 512 (2019) 169–175

16. Contribution of top barrier materials to high mobility in near-surface InAs quantum wells grown on GaSb(001)
J.S. Lee, B. Shojaei, M. Pendharkar, M. Feldman, K. Mukherjee, C.J. Palmstrøm, Physical Review Materials 3, 014603 (2019)

15. Recent Advances in InAs Quantum Dot Lasers Grown on On-Axis (001) Silicon by Molecular Beam Epitaxy
D. Jung, J. Norman, Y. Wan, S. Liu, R. Herrick, J. Selvidge, K. Mukherjee, A.C. Gossard, J.E. Bowers, Physica Status Solidi (A). (2019) 1800602



14. Direct observation of recombination-enhanced dislocation glide in heteroepitaxial GaAs on silicon
P.G. Callahan, B.B. Haidet, D. Jung, G.G.E. Seward, K. Mukherjee, Physical Review Materials 2 (2018) 081601. (Rapid Communication)

13. Recombination activity of threading dislocations in GaInP influenced by growth temperature
K. Mukherjee, C.H. Reilly, P.G. Callahan, G.G.E. Seward, Journal of Applied Physics 123 (2018) 165701



12. Low threading dislocation density GaAs growth on on-axis GaP/Si (001)
D. Jung, P.G. Callahan, B. Shin, K. Mukherjee, A.C. Gossard, J.E. Bowers, Journal of Applied Physics 122 (2017) 225703


Before starting the Mukherjee Group

11. Rapid imaging of misfit dislocations in SiGe/Si in cross-section and through oxide layers using electron channeling contrast
K. Mukherjee, B.A. Wacaser, S.W. Bedell, D.K. Sadana, Applied Physics Letters 110 (2017) 232101

10. Praseodymium Cuprate Thin Film Cathodes for Intermediate Temperature Solid Oxide Fuel Cells: Roles of Doping, Orientation, and Crystal Structure
K. Mukherjee, Y. Hayamizu, C.S. Kim, L.M. Kolchina, G.N. Mazo, S.Y. Istomin, S.R. Bishop, H.L. Tuller,  ACS Applied Materials and Interfaces 8 (2016) 34295–34302

9. Direct-Gap 2.1-2.2 eV AlInP Solar Cells on GaInAs/GaAs Metamorphic Buffers
M. Vaisman, K. Mukherjee, T. Masuda, K.N. Yaung, E.A. Fitzgerald, M.L. Lee, IEEE Journal of Photovoltaics 6 (2016) 571–577

8. Spontaneous lateral phase separation of AlInP during thin film growth and its effect on luminescence
K. Mukherjee, A.G. Norman, A.J. Akey, T. Buonassisi, E.A. Fitzgerald, Journal of Applied Physics 118 (2015) 115306

7. Improved photoluminescence characteristics of order-disorder AlGaInP quantum wells at room and elevated temperatures
K. Mukherjee, P.B. Deotare, E.A. Fitzgerald, Applied Physics Letters 106 (2015) 142109

6. Effects of dislocation strain on the epitaxy of lattice-mismatched AlGaInP layers
K. Mukherjee, D.A. Beaton, A. Mascarenhas, M.T. Bulsara, E.A. Fitzgerald, Journal of Crystal Growth 392 (2014) 74–80

5. Silicon CMOS Ohmic Contact Technology for Contacting III-V Compound Materials
N.Y. Pacella, K. Mukherjee, M.T. Bulsara, E.A. Fitzgerald,  ECS Journal of Solid State Science and Technology 2 (2013) P324–P331 

4. Determination of the direct to indirect bandgap transition composition in AlxIn1−xP
D.A. Beaton, T. Christian, K. Alberi, A. Mascarenhas, K. Mukherjee, E.A. Fitzgerald, Journal of Applied Physics 114 (2013) 203504

3. Amber-green light emitting diodes using order-disorder AlxIn1-xP heterostructures
T. Christian, D. A. Beaton, K. Mukherjee, K. Alberi, E. A. Fitzgerald, A. Mascarenhas, Journal of Applied Physics 114, 074505 (2013)

2. Growth, microstructure, and luminescent properties of direct-bandgap InAlP on relaxed InGaAs on GaAs substrates
K. Mukherjee, D.A. Beaton, T. Christian, E.J. Jones, K. Alberi, A. Mascarenhas, M.T. Bulsara, E.A. Fitzgerald, Journal of Applied Physics 113 (2013) 183518

1. Electron transport in electrospun TiO2 nanofiber dye-sensitized solar cells
K. Mukherjee, T. Teng, R. Jose, and S. Ramakrishna, Applied Physics Letters 95 (1), 012101 (2009)


Issued Patents

J. P. de Souza, Y. S. Lee, K. Mukherjee, and D. K. Sadana, “United States Patent: 10,581,109- Fabrication method of all solid-state thin film battery”, 3-Mar-2020.

S. W. Bedell, C.-W. Cheng, K. Mukherjee, J. A. Ott, D. K. Sadana, and B. A. Wacaser, “United States Patent: 10,460,937 - Post-growth heteroepitaxial layer separation for defect reduction in heteroeptaxial films”, 29-Oct-2019.

S. W. Bedell, K. Mukherjee, J. A. Ott, D. K. Sadana, and B. A. Wacaser, “United States Patent: 10,127,649 - Electron channeling pattern acquisition from small crystalline areas”, 13-Nov-2018.

N. Li, Q. Li, K. Mukherjee, D. K. Sadana, and G. G. Shahidi, “United States Patent: 10,043,941 – Light emitting diode having improved quantum efficiency at low injection current”, 07-Aug-2018.

J. P. de Souza, Y. S. Lee, K. Mukherjee, and D. K. Sadana, “United States Patent: 9,984,949 – Surface passivation having reduced interface defect density”, 29-May-2018.

S. W. Bedell, K. Mukherjee, J. A. Ott, D. K. Sadana, and B. A. Wacaser, “United States Patent: 9,859,091- Automatic alignment for high throughput electron channeling contrast imaging”, 02-Jan-2018.

S. W. Bedell, K. Mukherjee, J. A. Ott, D. K. Sadana, and B. A. Wacaser, “United States Patent: 9,741,532 - Multi-beam electron microscope for electron channeling contrast imaging of semiconductor material”, 22-Aug-2017.

S. W. Bedell, R. T. Mo, K. Mukherjee, J. A. Ott, D. K. Sadana, and B. A. Wacaser, “United States Patent: 9,739,728 - Automatic defect detection and classification for high throughput electron channeling contrast imaging”, 22-Aug-2017.